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Available to Order
Manufacturer Standard Lead Time: 11 week(s)
Quantity | Price |
---|---|
3000+ | $0.260 |
6000+ | $0.227 |
12000+ | $0.202 |
18000+ | $0.187 |
30000+ | $0.170 |
Price for:Each (Supplied on Full Reel)
Minimum: 3000
Multiple: 3000
$780.00
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Product Information
ManufacturerONSEMI
Manufacturer Part NoFDN5618P
Newark Part No.67R2065
Technical Datasheet
Transistor PolarityP Channel
Channel TypeP Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id1.25A
Drain Source On State Resistance0.17ohm
On Resistance Rds(on)0.17ohm
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd500mW
Gate Source Threshold Voltage Max1.6V
Transistor Case StyleSuperSOT
Power Dissipation500mW
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
Product Range-
MSLMSL 1 - Unlimited
SVHCNo SVHC (27-Jun-2024)
Product Overview
The FDN5618P is a 60V P-channel MOSFET uses Fairchild's high voltage PowerTrench® process. It has been optimized for load switch and DC-to-DC converters applications.
- Fast switching speed
- High performance Trench technology for extremely low RDS (ON)
Applications
Power Management, Industrial
Technical Specifications
Transistor Polarity
P Channel
Drain Source Voltage Vds
60V
Drain Source On State Resistance
0.17ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
500mW
Transistor Case Style
SuperSOT
No. of Pins
3Pins
Qualification
-
MSL
MSL 1 - Unlimited
Channel Type
P Channel
Continuous Drain Current Id
1.25A
On Resistance Rds(on)
0.17ohm
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
1.6V
Power Dissipation
500mW
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (27-Jun-2024)
Technical Docs (3)
Alternatives for FDN5618P
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Associated Products
1 Product Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate