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| 100+ | $2.130 |
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| 1000+ | $1.840 |
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Product Information
ManufacturerONSEMI
Manufacturer Part NoFDPF39N20
Newark Part No.61M6287
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds200V
Continuous Drain Current Id39A
Drain Source On State Resistance66mohm
On Resistance Rds(on)0.066ohm
Transistor Case StyleTO-220F
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Power Dissipation Pd37W
Gate Source Threshold Voltage Max5V
Power Dissipation37W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCLead (27-Jun-2024)
Product Overview
The FDPF39N20 is an UniFET™ high voltage MOSFET produced based on planar stripe and DMOS technology. It is tailored to reduce ON-state resistance and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
- 100% Avalanche tested
- 38nC Typical low gate charge
- 57pF Typical low Crss
Applications
Power Management, Consumer Electronics, Lighting
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
39A
On Resistance Rds(on)
0.066ohm
Transistor Mounting
Through Hole
Power Dissipation Pd
37W
Power Dissipation
37W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (27-Jun-2024)
Drain Source Voltage Vds
200V
Drain Source On State Resistance
66mohm
Transistor Case Style
TO-220F
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
5V
No. of Pins
3Pins
Product Range
-
MSL
-
Technical Docs (3)
Associated Products
4 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability