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Quantity | Price |
---|---|
1+ | $14.740 |
10+ | $12.890 |
25+ | $12.740 |
50+ | $12.720 |
100+ | $9.760 |
250+ | $9.470 |
900+ | $9.160 |
Price for:Each
Minimum: 1
Multiple: 1
$14.74
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Product Information
ManufacturerONSEMI
Manufacturer Part NoFFSH4065A
Newark Part No.65AC4731
Technical Datasheet
Product Range-
Diode ConfigurationSingle
Repetitive Peak Reverse Voltage650V
Average Forward Current40A
Total Capacitive Charge119nC
Diode Case StyleTO-247
No. of Pins2 Pin
Operating Temperature Max175°C
Diode MountingSurface Mount
Qualification-
SVHCLead
Product Overview
Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.
- Max Junction Temperature 175°C
- AEC−Q101 qualified
- Avalanche Rated 200 mJ
- No Reverse Recovery/No Forward Recovery
- Ease of Paralleling
- High Surge Current Capacity
- Positive Temperature Coefficient
Technical Specifications
Product Range
-
Repetitive Peak Reverse Voltage
650V
Total Capacitive Charge
119nC
No. of Pins
2 Pin
Diode Mounting
Surface Mount
SVHC
Lead
Diode Configuration
Single
Average Forward Current
40A
Diode Case Style
TO-247
Operating Temperature Max
175°C
Qualification
-
Technical Docs (3)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability