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FGA40N65SMD
IGBT, 80 A, 1.9 V, 349 W, 650 V, TO-3PN, 3 Pins
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422 In Stock
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| Quantity | Price |
|---|---|
| 1+ | $8.830 |
| 10+ | $8.270 |
| 25+ | $6.930 |
| 50+ | $5.560 |
| 100+ | $5.290 |
| 250+ | $4.990 |
| 900+ | $4.910 |
Price for:Each
Minimum: 1
Multiple: 1
$8.83
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Product Information
ManufacturerONSEMI
Manufacturer Part NoFGA40N65SMD
Newark Part No.54AH8692
Technical Datasheet
DC Collector Current80A
Continuous Collector Current80A
Collector Emitter Saturation Voltage Vce(on)1.9V
Collector Emitter Saturation Voltage1.9V
Power Dissipation349W
Power Dissipation Pd349W
Collector Emitter Voltage Max650V
Collector Emitter Voltage V(br)ceo650V
Transistor Case StyleTO-3PN
No. of Pins3Pins
Operating Temperature Max175°C
Transistor MountingThrough Hole
Product Range-
SVHCLead (27-Jun-2024)
Technical Specifications
DC Collector Current
80A
Collector Emitter Saturation Voltage Vce(on)
1.9V
Power Dissipation
349W
Collector Emitter Voltage Max
650V
Transistor Case Style
TO-3PN
Operating Temperature Max
175°C
Product Range
-
Continuous Collector Current
80A
Collector Emitter Saturation Voltage
1.9V
Power Dissipation Pd
349W
Collector Emitter Voltage V(br)ceo
650V
No. of Pins
3Pins
Transistor Mounting
Through Hole
SVHC
Lead (27-Jun-2024)
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate