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FQA70N10
Power MOSFET, General Purpose, N Channel, 100 V, 70 A, 23 mohm, TO-3P, Through Hole
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| Quantity | Price |
|---|---|
| 1+ | $3.520 |
| 10+ | $3.340 |
| 25+ | $3.150 |
| 50+ | $2.960 |
| 100+ | $2.940 |
| 250+ | $2.920 |
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$3.52
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Product Information
ManufacturerONSEMI
Manufacturer Part NoFQA70N10
Newark Part No.97K0152
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id70A
Drain Source On State Resistance23mohm
On Resistance Rds(on)0.023ohm
Transistor Case StyleTO-3P
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Power Dissipation Pd214W
Gate Source Threshold Voltage Max4V
Power Dissipation214W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
MSL-
Product Overview
The FQA70N10 is a N-channel enhancement-mode Power MOSFET produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance, provide superior switching performance and high avalanche energy strength. It is suitable for switched mode power supplies, audio amplifier and variable switching power applications.
- 100% avalanche tested
- 85nC typical low gate charge
- 150pF typical low Crss
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
70A
On Resistance Rds(on)
0.023ohm
Transistor Mounting
Through Hole
Power Dissipation Pd
214W
Power Dissipation
214W
Operating Temperature Max
175°C
Qualification
-
SVHC
Lead (27-Jun-2024)
Drain Source Voltage Vds
100V
Drain Source On State Resistance
23mohm
Transistor Case Style
TO-3P
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
MSL
-
Technical Docs (2)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability