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FQB55N10
Power MOSFET, N Channel, 100 V, 55 A, 0.026 ohm, TO-263 (D2PAK), Surface Mount
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| Quantity | Price |
|---|---|
| 1+ | $3.770 |
| 10+ | $3.330 |
| 25+ | $3.010 |
| 50+ | $2.690 |
| 100+ | $2.340 |
| 250+ | $2.010 |
| 500+ | $1.820 |
| 1600+ | $1.730 |
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Multiple: 1
$3.77
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Product Information
ManufacturerONSEMI
Manufacturer Part NoFQB55N10
Newark Part No.31M5011
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id55A
On Resistance Rds(on)0.026ohm
Drain Source On State Resistance0.026ohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd155W
Gate Source Threshold Voltage Max4V
Power Dissipation155W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
SVHCLead (27-Jun-2024)
Product Overview
The FQB55N10 is a QFET® N-channel enhancement-mode Power MOSFET produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance, provide superior switching performance and high avalanche energy strength. It is suitable for switched mode power supplies, active power factor correction (PFC) and electronic lamp ballasts.
- 100% avalanche tested
- 75nC typical low gate charge
- 130pF typical low Crss
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
55A
Drain Source On State Resistance
0.026ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
155W
Power Dissipation
155W
Operating Temperature Max
175°C
Qualification
-
SVHC
Lead (27-Jun-2024)
Drain Source Voltage Vds
100V
On Resistance Rds(on)
0.026ohm
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (1)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
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