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HUF75345G3

Name: ONSEMI HUF75345G3
Brand: ONSEMI
SKU: 83F5504
Availability: OutOfStock

Power MOSFET, General Purpose, N Channel, 55 V, 75 A, 0.007 ohm, TO-247, Through Hole

Image is for illustrative purposes only. Please refer to product description.

ManufacturerONSEMI

Manufacturer Part NoHUF75345G3

Newark Part No.83F5504

Technical Datasheet

Data Sheet

See all Technical Docs

Available to Order

Manufacturer Standard Lead Time: 16 week(s)

Quantity	Price
120+	$4.480
270+	$4.410

Price for:Each

Minimum: 120

Multiple: 30

$537.60

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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.

Your Part No

This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.

Product Information

ManufacturerONSEMI

Manufacturer Part NoHUF75345G3

Newark Part No.83F5504

Technical Datasheet

Data Sheet

Channel TypeN Channel

Transistor PolarityN Channel

Drain Source Voltage Vds55V

Continuous Drain Current Id75A

Drain Source On State Resistance0.007ohm

On Resistance Rds(on)0.007ohm

Transistor MountingThrough Hole

Rds(on) Test Voltage10V

Power Dissipation Pd325W

Transistor Case StyleTO-247

Gate Source Threshold Voltage Max4V

Power Dissipation325W

No. of Pins3Pins

Operating Temperature Max175°C

Qualification-

Product Range-

MSL-

SVHCLead

Product Overview

The HUF75345G3 is a N-channel Power MOSFET manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible ON-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, relay drivers, low-voltage bus switches and power management in battery-operated products.

Peak current vs. pulse width curve
UIS Rating curve
Simulation models - Temperature compensated PSPICE® & SABER™, thermal impedance SPICE & SABER

Applications

Power Management, Motor Drive & Control, Portable Devices

Technical Specifications

Channel Type

N Channel

Drain Source Voltage Vds

55V

Drain Source On State Resistance

0.007ohm

Transistor Mounting

Through Hole

Power Dissipation Pd

325W

Gate Source Threshold Voltage Max

No. of Pins

3Pins

Qualification

MSL

Transistor Polarity

N Channel

Continuous Drain Current Id

75A

On Resistance Rds(on)

0.007ohm

Rds(on) Test Voltage

10V

Transistor Case Style

TO-247

Power Dissipation

325W

Operating Temperature Max

175°C

Product Range

SVHC

Lead

Technical Docs (2)

Product Change Notice EN

Technical Data Sheet EN

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Associated Products

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Legislation and Environmental

US ECCN:EAR99

EU ECCN:Unknown

RoHS Compliant:Y-Ex

RoHS

RoHS Phthalates Compliant:Yes