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10+ | $0.386 |
25+ | $0.386 |
50+ | $0.386 |
100+ | $0.386 |
250+ | $0.386 |
500+ | $0.386 |
1000+ | $0.386 |
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Product Information
ManufacturerONSEMI
Manufacturer Part NoMJD122T4G
Newark Part No.10N9469
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage V(br)ceo100V
Collector Emitter Voltage Max100V
Transition Frequency4MHz
Continuous Collector Current8A
Power Dissipation20W
Transistor MountingSurface Mount
No. of Pins3Pins
Transistor Case StyleTO-252 (DPAK)
DC Current Gain hFE Min1000hFE
Operating Temperature Max150°C
Qualification-
Product Range-
MSLMSL 1 - Unlimited
SVHCLead
Alternatives for MJD122T4G
2 Products Found
Product Overview
The MJD122T4G is a 8A NPN bipolar power Darlington Transistor designed for general purpose amplifier and low speed switching applications. It is the surface-mount replacement for 2N6040 to 2N6045 series, TIP120 to TIP122 series and TIP125 to TIP127 series.
- Lead formed for surface-mount applications in plastic sleeves
- Monolithic construction with built-in base-emitter shunt resistors
- Complementary pairs simplifies designs
- AEC-Q101 qualified and PPAP capable
Applications
Industrial, Power Management, Automotive
Technical Specifications
Transistor Polarity
NPN
Collector Emitter Voltage Max
100V
Continuous Collector Current
8A
Transistor Mounting
Surface Mount
Transistor Case Style
TO-252 (DPAK)
Operating Temperature Max
150°C
Product Range
-
SVHC
Lead
Collector Emitter Voltage V(br)ceo
100V
Transition Frequency
4MHz
Power Dissipation
20W
No. of Pins
3Pins
DC Current Gain hFE Min
1000hFE
Qualification
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Associated Products
3 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability