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MJD243T4G
Bipolar (BJT) Single Transistor, NPN, 100 V, 4 A, 12.5 W, TO-252 (DPAK), Surface Mount
Image is for illustrative purposes only. Please refer to product description.
Available to Order
Manufacturer Standard Lead Time: 10 week(s)
| Quantity | Price |
|---|---|
| 1+ | $0.579 |
| 3000+ | $0.569 |
| 6000+ | $0.534 |
| 12000+ | $0.508 |
| 18000+ | $0.481 |
| 30000+ | $0.465 |
Price for:Each (Supplied on Full Reel)
Minimum: 2500
Multiple: 2500
$1,447.50
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Product Information
ManufacturerONSEMI
Manufacturer Part NoMJD243T4G
Newark Part No.88H4766
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage V(br)ceo100V
Collector Emitter Voltage Max100V
Continuous Collector Current4A
DC Collector Current4A
Power Dissipation Pd12.5W
Power Dissipation12.5W
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
No. of Pins3Pins
Transition Frequency40MHz
DC Current Gain hFE Min40hFE
DC Current Gain hFE40hFE
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCLead
Product Overview
The MJD243T4G is a 4A NPN bipolar Power Transistor designed for low voltage, low power and high gain audio amplifier applications.
- High current-gain - bandwidth product (fT = 40MHz minimum @ IC = 100mA DC)
- AEC-Q101 qualified and PPAP capable
Technical Specifications
Transistor Polarity
NPN
Collector Emitter Voltage Max
100V
DC Collector Current
4A
Power Dissipation
12.5W
Transistor Mounting
Surface Mount
Transition Frequency
40MHz
DC Current Gain hFE
40hFE
Qualification
-
MSL
MSL 1 - Unlimited
Collector Emitter Voltage V(br)ceo
100V
Continuous Collector Current
4A
Power Dissipation Pd
12.5W
Transistor Case Style
TO-252 (DPAK)
No. of Pins
3Pins
DC Current Gain hFE Min
40hFE
Operating Temperature Max
150°C
Product Range
-
SVHC
Lead
Technical Docs (2)
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Associated Products
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:To be advised
RoHS Phthalates Compliant:To be advised
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate