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MMBF102
JFET Transistor, Junction Field Effect, -25 V, 20 mA, -8 V, SOT-23, 3 Pin, 150 °C
Image is for illustrative purposes only. Please refer to product description.
ManufacturerONSEMI
Manufacturer Part NoMMBF102
Newark Part No.18C7360
Your Part Number
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 6 week(s)
Product Information
ManufacturerONSEMI
Manufacturer Part NoMMBF102
Newark Part No.18C7360
Technical Datasheet
Gate Source Breakdown Voltage Max-25V
Breakdown Voltage Vbr-25V
Zero Gate Voltage Drain Current Idss Min-
Zero Gate Voltage Drain Current Max20mA
Gate Source Cutoff Voltage Max-8V
Transistor Case StyleSOT-23
Transistor TypeRF FET
No. of Pins3 Pin
Channel TypeN Channel
Transistor MountingSurface Mount
Operating Temperature Max150°C
Qualification-
Product Range-
MSL-
SVHCNo SVHC (14-Jun-2023)
Technical Specifications
Gate Source Breakdown Voltage Max
-25V
Zero Gate Voltage Drain Current Idss Min
-
Gate Source Cutoff Voltage Max
-8V
Transistor Type
RF FET
Channel Type
N Channel
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (14-Jun-2023)
Breakdown Voltage Vbr
-25V
Zero Gate Voltage Drain Current Max
20mA
Transistor Case Style
SOT-23
No. of Pins
3 Pin
Transistor Mounting
Surface Mount
Qualification
-
MSL
-
Technical Docs (1)
Associated Products
1 Product Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (14-Jun-2023)
Download Product Compliance Certificate
Product Compliance Certificate