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MMBTH10-4LT1G
Bipolar - RF Transistor, NPN, 25 V, 800 MHz, 225 mW, 1 mA, SOT-23
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Available to Order
Manufacturer Standard Lead Time: 13 week(s)
| Quantity | Price |
|---|---|
| 6000+ | $0.064 |
| 18000+ | $0.055 |
| 30000+ | $0.045 |
Price for:Each (Supplied on Full Reel)
Minimum: 9000
Multiple: 3000
$576.00
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Product Information
ManufacturerONSEMI
Manufacturer Part NoMMBTH10-4LT1G
Newark Part No.26K4540
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage Max25V
Collector Emitter Voltage V(br)ceo25V
Transition Frequency800MHz
Power Dissipation Pd225mW
Power Dissipation225mW
DC Collector Current1mA
Continuous Collector Current1mA
DC Current Gain hFE120hFE
Transistor MountingSurface Mount
Transistor Case StyleSOT-23
No. of Pins3Pins
DC Current Gain hFE Min120hFE
Operating Temperature Max150°C
Product Range-
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (27-Jun-2024)
Technical Specifications
Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
25V
Power Dissipation Pd
225mW
DC Collector Current
1mA
DC Current Gain hFE
120hFE
Transistor Case Style
SOT-23
DC Current Gain hFE Min
120hFE
Product Range
-
MSL
MSL 1 - Unlimited
Collector Emitter Voltage Max
25V
Transition Frequency
800MHz
Power Dissipation
225mW
Continuous Collector Current
1mA
Transistor Mounting
Surface Mount
No. of Pins
3Pins
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (27-Jun-2024)
Technical Docs (3)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate