Print Page
NDC7001C
Dual MOSFET, Complementary N and P Channel, 50 V, 50 V, 340 mA, 340 mA, 1 ohm
Image is for illustrative purposes only. Please refer to product description.
43,381 In Stock
Need more?
Same day shipping
Order before 9pm EST standard shipping
Available in quantity shown. To order more than shown inventory, contact sales
| Quantity | Price |
|---|---|
| 1+ | $0.161 |
| 25+ | $0.161 |
| 50+ | $0.161 |
| 100+ | $0.161 |
| 250+ | $0.161 |
| 500+ | $0.161 |
| 1000+ | $0.161 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$0.16
Enter Your Part No/Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerONSEMI
Manufacturer Part NoNDC7001C
Newark Part No.58K9473
Technical Datasheet
Channel TypeComplementary N and P Channel
Continuous Drain Current Id510mA
Drain Source Voltage Vds N Channel50V
Drain Source Voltage Vds P Channel50V
Drain Source Voltage Vds60V
Continuous Drain Current Id N Channel340mA
Continuous Drain Current Id P Channel340mA
Drain Source On State Resistance N Channel1ohm
Drain Source On State Resistance P Channel1ohm
Transistor Case StyleSuperSOT
No. of Pins6Pins
Power Dissipation N Channel700mW
Power Dissipation P Channel700mW
Operating Temperature Max150°C
Qualification-
Product Range-
MSLMSL 1 - Unlimited
SVHCNo SVHC (27-Jun-2024)
Alternatives for NDC7001C
1 Product Found
Product Overview
The NDC7001C is a dual N/P-channel enhancement-mode FET produced using high cell density and DMOS technology. This very high density process has been designed to minimize ON-state resistance, provide rugged and reliable performance and fast switching. This device is particularly suited for low voltage, low current, switching and power supply applications.
- High saturation current
- High density cell design for low RDS (ON)
- Design using copper lead-frame for superior thermal and electrical capabilities
Applications
Industrial, Power Management
Technical Specifications
Channel Type
Complementary N and P Channel
Drain Source Voltage Vds N Channel
50V
Drain Source Voltage Vds
60V
Continuous Drain Current Id P Channel
340mA
Drain Source On State Resistance P Channel
1ohm
No. of Pins
6Pins
Power Dissipation P Channel
700mW
Qualification
-
MSL
MSL 1 - Unlimited
Continuous Drain Current Id
510mA
Drain Source Voltage Vds P Channel
50V
Continuous Drain Current Id N Channel
340mA
Drain Source On State Resistance N Channel
1ohm
Transistor Case Style
SuperSOT
Power Dissipation N Channel
700mW
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (27-Jun-2024)
Technical Docs (2)
Associated Products
3 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability