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NDSH20120C-F155
Silicon Carbide Schottky Diode, EliteSiC Series, Single, 1.2 kV, 20 A, 100 nC, TO-247
Image is for illustrative purposes only. Please refer to product description.
ManufacturerONSEMI
Manufacturer Part NoNDSH20120C-F155
Newark Part No.04AM1314
Product RangeEliteSiC Series
330 In Stock
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| Quantity | Price |
|---|---|
| 1+ | $15.790 |
| 10+ | $12.190 |
| 25+ | $11.890 |
| 50+ | $11.570 |
| 100+ | $11.170 |
| 250+ | $10.750 |
| 900+ | $9.500 |
Price for:Each
Minimum: 1
Multiple: 1
$15.79
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Product Information
ManufacturerONSEMI
Manufacturer Part NoNDSH20120C-F155
Newark Part No.04AM1314
Product RangeEliteSiC Series
Product RangeEliteSiC Series
Diode ConfigurationSingle
Repetitive Peak Reverse Voltage1.2kV
Average Forward Current20A
Total Capacitive Charge100nC
Diode Case StyleTO-247
No. of Pins2 Pin
Operating Temperature Max175°C
Diode MountingThrough Hole
Qualification-
SVHCNo SVHC (15-Jan-2018)
Technical Specifications
Product Range
EliteSiC Series
Repetitive Peak Reverse Voltage
1.2kV
Total Capacitive Charge
100nC
No. of Pins
2 Pin
Diode Mounting
Through Hole
SVHC
No SVHC (15-Jan-2018)
Diode Configuration
Single
Average Forward Current
20A
Diode Case Style
TO-247
Operating Temperature Max
175°C
Qualification
-
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (15-Jan-2018)
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Product Compliance Certificate
Product traceability