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NJD35N04T4G
Bipolar Transistor Array, Dual NPN, 350 V, 4 A, 45 W
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Product Information
ManufacturerONSEMI
Manufacturer Part NoNJD35N04T4G
Newark Part No.02M9867
Technical Datasheet
Transistor PolarityDual NPN
Collector Emitter Voltage Max NPN350V
Collector Emitter Voltage Max PNP-
Continuous Collector Current NPN4A
Continuous Collector Current PNP-
Power Dissipation NPN45W
Transistor Case StyleTO-252 (DPAK)
Power Dissipation PNP-
DC Current Gain hFE Min NPN300hFE
Transistor MountingSurface Mount
DC Current Gain hFE Min PNP-
No. of Pins3Pins
Operating Temperature Max150°C
Transition Frequency NPN90MHz
Transition Frequency PNP-
Qualification-
Product Range-
MSLMSL 1 - Unlimited
SVHCLead
Technical Specifications
Transistor Polarity
Dual NPN
Collector Emitter Voltage Max PNP
-
Continuous Collector Current PNP
-
Transistor Case Style
TO-252 (DPAK)
DC Current Gain hFE Min NPN
300hFE
DC Current Gain hFE Min PNP
-
Operating Temperature Max
150°C
Transition Frequency PNP
-
Product Range
-
SVHC
Lead
Collector Emitter Voltage Max NPN
350V
Continuous Collector Current NPN
4A
Power Dissipation NPN
45W
Power Dissipation PNP
-
Transistor Mounting
Surface Mount
No. of Pins
3Pins
Transition Frequency NPN
90MHz
Qualification
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
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Associated Products
4 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate