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NST30010MXV6T1G
Bipolar Transistor Array, Dual PNP, 30 V, 100 mA
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Product Information
ManufacturerONSEMI
Manufacturer Part NoNST30010MXV6T1G
Newark Part No.34M7851
Technical Datasheet
Transistor PolarityDual PNP
Collector Emitter Voltage Max NPN-
Collector Emitter Voltage Max PNP30V
Continuous Collector Current NPN-
Continuous Collector Current PNP100mA
Power Dissipation NPN-
Power Dissipation PNP661mW
DC Current Gain hFE Min NPN-
DC Current Gain hFE Min PNP420hFE
Transistor Case StyleSOT-563
No. of Pins6Pins
Transistor MountingSurface Mount
Operating Temperature Max150°C
Transition Frequency NPN-
Transition Frequency PNP100MHz
Product Range-
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (27-Jun-2024)
Technical Specifications
Transistor Polarity
Dual PNP
Collector Emitter Voltage Max PNP
30V
Continuous Collector Current PNP
100mA
Power Dissipation PNP
661mW
DC Current Gain hFE Min PNP
420hFE
No. of Pins
6Pins
Operating Temperature Max
150°C
Transition Frequency PNP
100MHz
Qualification
-
SVHC
No SVHC (27-Jun-2024)
Collector Emitter Voltage Max NPN
-
Continuous Collector Current NPN
-
Power Dissipation NPN
-
DC Current Gain hFE Min NPN
-
Transistor Case Style
SOT-563
Transistor Mounting
Surface Mount
Transition Frequency NPN
-
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate