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NTBG015N065SC1
Silicon Carbide MOSFET, Single, N Channel, 145 A, 650 V, 0.012 ohm, TO-263 (D2PAK)
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ManufacturerONSEMI
Manufacturer Part NoNTBG015N065SC1
Newark Part No.81AJ0219
Product RangeEliteSiC Series
Technical Datasheet
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Product Information
ManufacturerONSEMI
Manufacturer Part NoNTBG015N065SC1
Newark Part No.81AJ0219
Product RangeEliteSiC Series
Technical Datasheet
MOSFET Module ConfigurationSingle
Channel TypeN Channel
Continuous Drain Current Id145A
Drain Source Voltage Vds650V
Drain Source On State Resistance0.012ohm
Transistor Case StyleTO-263 (D2PAK)
No. of Pins7Pins
Rds(on) Test Voltage18V
Gate Source Threshold Voltage Max2.8V
Power Dissipation500W
Operating Temperature Max175°C
Product RangeEliteSiC Series
SVHCLead
Technical Specifications
MOSFET Module Configuration
Single
Continuous Drain Current Id
145A
Drain Source On State Resistance
0.012ohm
No. of Pins
7Pins
Gate Source Threshold Voltage Max
2.8V
Operating Temperature Max
175°C
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Drain Source Voltage Vds
650V
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
18V
Power Dissipation
500W
Product Range
EliteSiC Series
SVHC
Lead
Technical Docs (2)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
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