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NTBG022N120M3S
Silicon Carbide MOSFET, Single, N Channel, 58 A, 1.2 kV, 0.022 ohm, TO-263HV (D2PAK)
Image is for illustrative purposes only. Please refer to product description.
ManufacturerONSEMI
Manufacturer Part NoNTBG022N120M3S
Newark Part No.47AK6045
Product RangeEliteSiC Series
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 21 week(s)
| Quantity | Price |
|---|---|
| 400+ | $14.690 |
Price for:Each (Supplied on Full Reel)
Minimum: 800
Multiple: 800
$11,752.00
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
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Product Information
ManufacturerONSEMI
Manufacturer Part NoNTBG022N120M3S
Newark Part No.47AK6045
Product RangeEliteSiC Series
Technical Datasheet
MOSFET Module ConfigurationSingle
Channel TypeN Channel
Continuous Drain Current Id58A
Drain Source Voltage Vds1.2kV
Drain Source On State Resistance0.022ohm
Transistor Case StyleTO-263HV (D2PAK)
No. of Pins7Pins
Rds(on) Test Voltage18V
Gate Source Threshold Voltage Max2.72V
Power Dissipation234W
Operating Temperature Max175°C
Product RangeEliteSiC Series
SVHCLead
Technical Specifications
MOSFET Module Configuration
Single
Continuous Drain Current Id
58A
Drain Source On State Resistance
0.022ohm
No. of Pins
7Pins
Gate Source Threshold Voltage Max
2.72V
Operating Temperature Max
175°C
SVHC
Lead
Channel Type
N Channel
Drain Source Voltage Vds
1.2kV
Transistor Case Style
TO-263HV (D2PAK)
Rds(on) Test Voltage
18V
Power Dissipation
234W
Product Range
EliteSiC Series
Technical Docs (2)
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Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate