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NTH4L015N065SC1
Silicon Carbide MOSFET, Single, N Channel, 142 A, 650 V, 0.012 ohm, TO-247
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ManufacturerONSEMI
Manufacturer Part NoNTH4L015N065SC1
Newark Part No.81AJ0234
Product RangeEliteSiC Series
Technical Datasheet
72 In Stock
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| Quantity | Price |
|---|---|
| 1+ | $30.850 |
| 5+ | $29.430 |
| 10+ | $28.010 |
| 25+ | $26.590 |
| 50+ | $25.180 |
| 100+ | $24.700 |
| 250+ | $24.220 |
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Multiple: 1
$30.85
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Product Information
ManufacturerONSEMI
Manufacturer Part NoNTH4L015N065SC1
Newark Part No.81AJ0234
Product RangeEliteSiC Series
Technical Datasheet
MOSFET Module ConfigurationSingle
Channel TypeN Channel
Continuous Drain Current Id142A
Drain Source Voltage Vds650V
Drain Source On State Resistance0.012ohm
Transistor Case StyleTO-247
No. of Pins4Pins
Rds(on) Test Voltage18V
Gate Source Threshold Voltage Max2.5V
Power Dissipation500W
Operating Temperature Max175°C
Product RangeEliteSiC Series
SVHCLead
Technical Specifications
MOSFET Module Configuration
Single
Continuous Drain Current Id
142A
Drain Source On State Resistance
0.012ohm
No. of Pins
4Pins
Gate Source Threshold Voltage Max
2.5V
Operating Temperature Max
175°C
SVHC
Lead
Channel Type
N Channel
Drain Source Voltage Vds
650V
Transistor Case Style
TO-247
Rds(on) Test Voltage
18V
Power Dissipation
500W
Product Range
EliteSiC Series
Technical Docs (2)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
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Product Compliance Certificate
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