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NTH4L020N120SC1
Silicon Carbide MOSFET, Single, N Channel, 102 A, 1.2 kV, 0.02 ohm, TO-247
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ManufacturerONSEMI
Manufacturer Part NoNTH4L020N120SC1
Newark Part No.91AH8490
Product RangeEliteSiC Series
Technical Datasheet
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| Quantity | Price |
|---|---|
| 1+ | $35.340 |
| 5+ | $35.340 |
| 10+ | $34.780 |
| 25+ | $33.590 |
| 50+ | $33.350 |
| 100+ | $33.320 |
| 250+ | $33.290 |
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Product Information
ManufacturerONSEMI
Manufacturer Part NoNTH4L020N120SC1
Newark Part No.91AH8490
Product RangeEliteSiC Series
Technical Datasheet
MOSFET Module ConfigurationSingle
Channel TypeN Channel
Continuous Drain Current Id102A
Drain Source Voltage Vds1.2kV
Drain Source On State Resistance0.02ohm
Transistor Case StyleTO-247
No. of Pins4Pins
Rds(on) Test Voltage20V
Gate Source Threshold Voltage Max2.7V
Power Dissipation510W
Operating Temperature Max175°C
Product RangeEliteSiC Series
SVHCLead
Product Overview
NTH4L020N120SC1 is a silicon carbide (SiC) MOSFET. Typical applications are UPS, DC-DC converter, boost inverter.
- 100% avalanche tested
- High speed switching with low capacitance (Coss = 258pF)
- Drain-to-source voltage is 1200V at TJ = 25°C
- Continuous drain current is 102A at TC = 25°C
- Power dissipation is 255W at TC = 100°C
- Pulsed drain current is 408A at TA = 25°C
- Operating junction and storage temperature range from -55 to +175°C
- TO-247-4LD package
Technical Specifications
MOSFET Module Configuration
Single
Continuous Drain Current Id
102A
Drain Source On State Resistance
0.02ohm
No. of Pins
4Pins
Gate Source Threshold Voltage Max
2.7V
Operating Temperature Max
175°C
SVHC
Lead
Channel Type
N Channel
Drain Source Voltage Vds
1.2kV
Transistor Case Style
TO-247
Rds(on) Test Voltage
20V
Power Dissipation
510W
Product Range
EliteSiC Series
Technical Docs (2)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
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