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NTHL060N090SC1
Silicon Carbide MOSFET, Single, N Channel, 46 A, 900 V, 0.06 ohm, TO-247
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ManufacturerONSEMI
Manufacturer Part NoNTHL060N090SC1
Newark Part No.91AH8485
Product RangeEliteSiC Series
Technical Datasheet
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Product Information
ManufacturerONSEMI
Manufacturer Part NoNTHL060N090SC1
Newark Part No.91AH8485
Product RangeEliteSiC Series
Technical Datasheet
MOSFET Module ConfigurationSingle
Channel TypeN Channel
Continuous Drain Current Id46A
Drain Source Voltage Vds900V
Drain Source On State Resistance0.06ohm
Transistor Case StyleTO-247
No. of Pins3Pins
Rds(on) Test Voltage15V
Gate Source Threshold Voltage Max2.7V
Power Dissipation221W
Operating Temperature Max175°C
Product RangeEliteSiC Series
SVHCLead
Product Overview
NTHL060N090SC1 is an EliteSiC silicon carbide (SiC) MOSFET. Typical applications are UPS, DC to DC converter, and boost inverter.
- 100% UIL tested
- Low effective output capacitance (typ. Coss= 113pF)
- Typical RDS(on)= 60mohm at VGS = 15V
- Ultra low gate charge (typical QG(tot)= 87nC)
- Drain-to-source voltage is 900V at TJ = 25°C
- Gate-to-source voltage is +22/-8V at TJ = 25°C
- Operating junction and storage temperature range from -55 to +175°C
- TO-247-3LD package
Technical Specifications
MOSFET Module Configuration
Single
Continuous Drain Current Id
46A
Drain Source On State Resistance
0.06ohm
No. of Pins
3Pins
Gate Source Threshold Voltage Max
2.7V
Operating Temperature Max
175°C
SVHC
Lead
Channel Type
N Channel
Drain Source Voltage Vds
900V
Transistor Case Style
TO-247
Rds(on) Test Voltage
15V
Power Dissipation
221W
Product Range
EliteSiC Series
Technical Docs (2)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
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