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NTZD3155CT1G
Dual MOSFET, Complementary N and P Channel, 20 V, 20 V, 540 mA, 540 mA, 400 mohm
Image is for illustrative purposes only. Please refer to product description.
Available to Order
Manufacturer Standard Lead Time: 22 week(s)
| Quantity | Price |
|---|---|
| 3000+ | $0.234 |
| 6000+ | $0.212 |
| 12000+ | $0.194 |
| 18000+ | $0.182 |
| 30000+ | $0.170 |
Price for:Each (Supplied on Full Reel)
Minimum: 4000
Multiple: 4000
$936.00
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerONSEMI
Manufacturer Part NoNTZD3155CT1G
Newark Part No.45J2183
Technical Datasheet
Channel TypeComplementary N and P Channel
Drain Source Voltage Vds N Channel20V
Continuous Drain Current Id540mA
Drain Source Voltage Vds20V
Drain Source Voltage Vds P Channel20V
Continuous Drain Current Id N Channel540mA
Continuous Drain Current Id P Channel540mA
Drain Source On State Resistance N Channel400mohm
Drain Source On State Resistance P Channel0.4ohm
Transistor Case StyleSOT-563
No. of Pins6Pins
Power Dissipation N Channel250mW
Power Dissipation P Channel250mW
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCNo SVHC (27-Jun-2024)
Product Overview
The NTZD3155CT1G is a N/P-channel complementary Small Signal MOSFET designed for cell phones, MP3s, digital cameras and PDAs. It is suitable for DC-to-DC conversion circuits, load/power switching with level shift, single or dual cell Li-Ion battery operated systems and high speed circuit applications.
- Leading Trench technology for low RDS (ON) performance
- High efficiency system performance
- Low threshold voltage
- ESD protected gate
- Small footprint
Applications
Industrial, Power Management
Technical Specifications
Channel Type
Complementary N and P Channel
Continuous Drain Current Id
540mA
Drain Source Voltage Vds P Channel
20V
Continuous Drain Current Id P Channel
540mA
Drain Source On State Resistance P Channel
0.4ohm
No. of Pins
6Pins
Power Dissipation P Channel
250mW
Qualification
-
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
20V
Drain Source Voltage Vds
20V
Continuous Drain Current Id N Channel
540mA
Drain Source On State Resistance N Channel
400mohm
Transistor Case Style
SOT-563
Power Dissipation N Channel
250mW
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (27-Jun-2024)
Technical Docs (2)
Alternatives for NTZD3155CT1G
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Associated Products
2 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate