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NVBG023N065M3S
Silicon Carbide MOSFET, Single, N Channel, 70 A, 650 V, 33 mohm, TO-263HV (D2PAK)
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ManufacturerONSEMI
Manufacturer Part NoNVBG023N065M3S
Newark Part No.20AM7295
Product RangeEliteSiC Series
Technical Datasheet
779 In Stock
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| Quantity | Price |
|---|---|
| 1+ | $27.480 |
| 10+ | $21.700 |
| 25+ | $21.130 |
| 50+ | $20.550 |
| 100+ | $19.980 |
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Multiple: 1
$27.48
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Product Information
ManufacturerONSEMI
Manufacturer Part NoNVBG023N065M3S
Newark Part No.20AM7295
Product RangeEliteSiC Series
Technical Datasheet
MOSFET Module ConfigurationSingle
Channel TypeN Channel
Continuous Drain Current Id70A
Drain Source Voltage Vds650V
Drain Source On State Resistance33mohm
Transistor Case StyleTO-263HV (D2PAK)
No. of Pins7Pins
Rds(on) Test Voltage18V
Gate Source Threshold Voltage Max4V
Power Dissipation263W
Operating Temperature Max175°C
Product RangeEliteSiC Series
SVHCNo SVHC (27-Jun-2024)
Product Overview
NVBG023N065M3S is an EliteSiC 650V M3S MOSFET in a 7 pin D2PAK package. It uses a completely new technology that provides superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size. Typical applications include automotive on board charger and automotive DC−DC converter for EV/HEV.
- Drain to source voltage is 650V, maximum drain current is 70A
- Typical RDS(on) = 23mohm at VGS = 18V
- Ultra low gate charge QG(tot) = 69nC
- High speed switching with low capacitance (Coss = 153pF)
- 100% avalanche tested
- AEC−Q101 qualified and PPAP capable
- Operating junction temperature range from -55 to +175°C
Technical Specifications
MOSFET Module Configuration
Single
Continuous Drain Current Id
70A
Drain Source On State Resistance
33mohm
No. of Pins
7Pins
Gate Source Threshold Voltage Max
4V
Operating Temperature Max
175°C
SVHC
No SVHC (27-Jun-2024)
Channel Type
N Channel
Drain Source Voltage Vds
650V
Transistor Case Style
TO-263HV (D2PAK)
Rds(on) Test Voltage
18V
Power Dissipation
263W
Product Range
EliteSiC Series
Technical Docs (1)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability