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NXH020U90MNF2PTG
Silicon Carbide MOSFET, Half-Bridge Module, Dual N Channel, 149 A, 900 V, 0.01003 ohm, Module
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Available to Order
Manufacturer Standard Lead Time: 18 week(s)
| Quantity | Price |
|---|---|
| 10+ | $216.010 |
| 40+ | $208.880 |
Price for:Each
Minimum: 20
Multiple: 20
$4,320.20
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Product Information
ManufacturerONSEMI
Manufacturer Part NoNXH020U90MNF2PTG
Newark Part No.57AK6429
Technical Datasheet
MOSFET Module ConfigurationHalf-Bridge Module
Channel TypeDual N Channel
Continuous Drain Current Id149A
Drain Source Voltage Vds900V
Drain Source On State Resistance0.01003ohm
Transistor Case StyleModule
No. of Pins20Pins
Rds(on) Test Voltage15V
Gate Source Threshold Voltage Max4.3V
Power Dissipation352W
Operating Temperature Max175°C
Product Range-
SVHCNo SVHC (27-Jun-2024)
Technical Specifications
MOSFET Module Configuration
Half-Bridge Module
Continuous Drain Current Id
149A
Drain Source On State Resistance
0.01003ohm
No. of Pins
20Pins
Gate Source Threshold Voltage Max
4.3V
Operating Temperature Max
175°C
MSL
MSL 1 - Unlimited
Channel Type
Dual N Channel
Drain Source Voltage Vds
900V
Transistor Case Style
Module
Rds(on) Test Voltage
15V
Power Dissipation
352W
Product Range
-
SVHC
No SVHC (27-Jun-2024)
Technical Docs (1)
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Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
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