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NXH040P120MNF1PG
Silicon Carbide MOSFET, Half Bridge, Dual N Channel, 30 A, 1.2 kV, 42 mohm, Module
Image is for illustrative purposes only. Please refer to product description.
Available to Order
Manufacturer Standard Lead Time: 18 week(s)
| Quantity | Price |
|---|---|
| 1+ | $101.340 |
| 5+ | $95.640 |
| 10+ | $89.950 |
| 25+ | $84.250 |
| 50+ | $78.550 |
Price for:Each
Minimum: 1
Multiple: 1
$101.34
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Product Information
ManufacturerONSEMI
Manufacturer Part NoNXH040P120MNF1PG
Newark Part No.81AK4282
Technical Datasheet
MOSFET Module ConfigurationHalf Bridge
Channel TypeDual N Channel
Continuous Drain Current Id30A
Drain Source Voltage Vds1.2kV
Drain Source On State Resistance42mohm
Transistor Case StyleModule
No. of Pins18Pins
Rds(on) Test Voltage20V
Gate Source Threshold Voltage Max4.3V
Power Dissipation74W
Operating Temperature Max175°C
Product Range-
Technical Specifications
MOSFET Module Configuration
Half Bridge
Continuous Drain Current Id
30A
Drain Source On State Resistance
42mohm
No. of Pins
18Pins
Gate Source Threshold Voltage Max
4.3V
Operating Temperature Max
175°C
SVHC
No SVHC (15-Jan-2018)
Channel Type
Dual N Channel
Drain Source Voltage Vds
1.2kV
Transistor Case Style
Module
Rds(on) Test Voltage
20V
Power Dissipation
74W
Product Range
-
Technical Docs (1)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
SVHC:No SVHC (15-Jan-2018)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability