Print Page
TP70H300G4JSGB-TR
Gallium Nitride (GaN) Transistor, 700 V, 8 A, 0.312 ohm, 5.4 nC, QFN, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerRENESAS
Manufacturer Part NoTP70H300G4JSGB-TR
Newark Part No.26AM1884
Product RangeSuperGaN Series
Your Part Number
1,000 In Stock
Need more?
Same day shipping
Order before 6pm EST standard shipping
| Quantity | Price |
|---|---|
| 1+ | $2.340 |
| 10+ | $2.060 |
| 25+ | $1.870 |
| 50+ | $1.660 |
| 100+ | $1.450 |
| 250+ | $1.240 |
| 500+ | $1.130 |
| 1000+ | $1.070 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$2.34
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerRENESAS
Manufacturer Part NoTP70H300G4JSGB-TR
Newark Part No.26AM1884
Product RangeSuperGaN Series
Technical Datasheet
Drain Source Voltage Vds700V
Continuous Drain Current Id8A
Drain Source On State Resistance0.312ohm
Typical Gate Charge5.4nC
Transistor Case StyleQFN
Transistor MountingSurface Mount
No. of Pins8Pins
Product RangeSuperGaN Series
Qualification-
SVHCNo SVHC (25-Jun-2025)
Product Overview
TP70H300G4JSGB-TR is a 700V, 300mohm SuperGaN® Gallium Nitride (GaN) FET. It is a normally-off device using Renesas’ Gen IV platform. It combines a state-of-the art high voltage GaN HEMT with a low voltage silicon MOSFET to offer superior reliability and performance. The Gen IV SuperGaN® platform uses advanced epi and patented design technologies to simplify manufacturability while improving efficiency over silicon via lower gate charge, output capacitance, crossover loss, and reverse recovery charge. Applications include consumer, power adapters, low power SMPS and lighting.
- Dynamic RDS(on)eff production tested
- Transient over-voltage capability and E-mode gate driver operation without zener protection
- Very low QRR
- Reduced crossover loss
- 2kV HBM ESD rating
- Achieves increased efficiency in both hard- and soft-switched circuits
- Easy to drive with commonly used gate drivers
Technical Specifications
Drain Source Voltage Vds
700V
Drain Source On State Resistance
0.312ohm
Transistor Case Style
QFN
No. of Pins
8Pins
Qualification
-
Continuous Drain Current Id
8A
Typical Gate Charge
5.4nC
Transistor Mounting
Surface Mount
Product Range
SuperGaN Series
SVHC
No SVHC (25-Jun-2025)
Technical Docs (1)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate