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BSM080D12P2C008
Silicon Carbide MOSFET, Half Bridge, Dual N Channel, 80 A, 1.2 kV, Module
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Available to Order
Manufacturer Standard Lead Time: 28 week(s)
| Quantity | Price |
|---|---|
| 1+ | $443.050 |
Price for:Each
Minimum: 1
Multiple: 1
$443.05
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Product Information
ManufacturerROHM
Manufacturer Part NoBSM080D12P2C008
Newark Part No.88AH6156
Technical Datasheet
MOSFET Module ConfigurationHalf Bridge
Transistor PolarityDual N Channel
Channel TypeDual N Channel
Continuous Drain Current Id80A
Drain Source Voltage Vds1.2kV
Drain Source On State Resistance-
On Resistance Rds(on)-
Transistor Case StyleModule
No. of Pins-
Power Dissipation Pd600W
Rds(on) Test Voltage-
Gate Source Threshold Voltage Max4V
Power Dissipation600W
Operating Temperature Max150°C
Product Range-
SVHCTo Be Advised
Technical Specifications
MOSFET Module Configuration
Half Bridge
Channel Type
Dual N Channel
Drain Source Voltage Vds
1.2kV
On Resistance Rds(on)
-
No. of Pins
-
Rds(on) Test Voltage
-
Power Dissipation
600W
Product Range
-
Transistor Polarity
Dual N Channel
Continuous Drain Current Id
80A
Drain Source On State Resistance
-
Transistor Case Style
Module
Power Dissipation Pd
600W
Gate Source Threshold Voltage Max
4V
Operating Temperature Max
150°C
SVHC
To Be Advised
Technical Docs (1)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability