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BSM120D12P2C005
Silicon Carbide MOSFET, Half Bridge, N Channel, 120 A, 1.2 kV, Module
Image is for illustrative purposes only. Please refer to product description.
Available to Order
Manufacturer Standard Lead Time: 28 week(s)
| Quantity | Price |
|---|---|
| 1+ | $511.200 |
Price for:Each
Minimum: 1
Multiple: 1
$511.20
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Product Information
ManufacturerROHM
Manufacturer Part NoBSM120D12P2C005
Newark Part No.05X9537
Technical Datasheet
MOSFET Module ConfigurationHalf Bridge
Transistor PolarityN Channel
Channel TypeN Channel
Continuous Drain Current Id120A
Drain Source Voltage Vds1.2kV
On Resistance Rds(on)-
Drain Source On State Resistance-
Transistor Case StyleModule
No. of Pins10Pins
Rds(on) Test Voltage-
Gate Source Threshold Voltage Max2.7V
Power Dissipation Pd780W
Power Dissipation780W
Operating Temperature Max150°C
Product Range-
SVHCTo Be Advised
Product Overview
The BSM120D12P2C005 is a N-channel SiC Power Module designed for use with inverter, converter, photovoltaic, wind power generation and induction heating equipment applications. The device offers low surge, low switching loss and high-speed switching possible, reduced temperature dependence.
Technical Specifications
MOSFET Module Configuration
Half Bridge
Channel Type
N Channel
Drain Source Voltage Vds
1.2kV
Drain Source On State Resistance
-
No. of Pins
10Pins
Gate Source Threshold Voltage Max
2.7V
Power Dissipation
780W
Product Range
-
Transistor Polarity
N Channel
Continuous Drain Current Id
120A
On Resistance Rds(on)
-
Transistor Case Style
Module
Rds(on) Test Voltage
-
Power Dissipation Pd
780W
Operating Temperature Max
150°C
SVHC
To Be Advised
Technical Docs (3)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability