Print Page
BSM600D12P3G001
Silicon Carbide MOSFET, Half Bridge, Dual N Channel, 600 A, 1.2 kV, Module
Image is for illustrative purposes only. Please refer to product description.
4 In Stock
Need more?
Same day shipping
Order before 9pm EST standard shipping
Available in quantity shown. To order more than shown inventory, contact sales
| Quantity | Price |
|---|---|
| 1+ | $2,254.730 |
Price for:Each
Minimum: 1
Multiple: 1
$2,254.73
Enter Your Part No/Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerROHM
Manufacturer Part NoBSM600D12P3G001
Newark Part No.88AH6171
Technical Datasheet
MOSFET Module ConfigurationHalf Bridge
Transistor PolarityDual N Channel
Channel TypeDual N Channel
Continuous Drain Current Id600A
Drain Source Voltage Vds1.2kV
Drain Source On State Resistance-
On Resistance Rds(on)-
Transistor Case StyleModule
No. of Pins-
Power Dissipation Pd2.45kW
Rds(on) Test Voltage-
Gate Source Threshold Voltage Max5.6V
Power Dissipation2.45kW
Operating Temperature Max150°C
Product Range-
SVHCTo Be Advised
Technical Specifications
MOSFET Module Configuration
Half Bridge
Channel Type
Dual N Channel
Drain Source Voltage Vds
1.2kV
On Resistance Rds(on)
-
No. of Pins
-
Rds(on) Test Voltage
-
Power Dissipation
2.45kW
Product Range
-
Transistor Polarity
Dual N Channel
Continuous Drain Current Id
600A
Drain Source On State Resistance
-
Transistor Case Style
Module
Power Dissipation Pd
2.45kW
Gate Source Threshold Voltage Max
5.6V
Operating Temperature Max
150°C
SVHC
To Be Advised
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate