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BSM600D12P4G103
Silicon Carbide MOSFET, Half Bridge, Dual N Channel, 567 A, 1.2 kV, Module
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| Quantity | Price |
|---|---|
| 1+ | $1,460.390 |
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Multiple: 1
$1,460.39
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Product Information
ManufacturerROHM
Manufacturer Part NoBSM600D12P4G103
Newark Part No.70AK6462
Technical Datasheet
MOSFET Module ConfigurationHalf Bridge
Channel TypeDual N Channel
Continuous Drain Current Id567A
Drain Source Voltage Vds1.2kV
Drain Source On State Resistance-
Transistor Case StyleModule
No. of Pins11Pins
Rds(on) Test Voltage-
Gate Source Threshold Voltage Max4.8V
Power Dissipation1.78kW
Operating Temperature Max150°C
Product Range-
SVHCTo Be Advised
Technical Specifications
MOSFET Module Configuration
Half Bridge
Continuous Drain Current Id
567A
Drain Source On State Resistance
-
No. of Pins
11Pins
Gate Source Threshold Voltage Max
4.8V
Operating Temperature Max
150°C
SVHC
To Be Advised
Channel Type
Dual N Channel
Drain Source Voltage Vds
1.2kV
Transistor Case Style
Module
Rds(on) Test Voltage
-
Power Dissipation
1.78kW
Product Range
-
Technical Docs (1)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability