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SCT2080KEHRC11
Silicon Carbide MOSFET, Single, N Channel, 40 A, 1.2 kV, 0.08 ohm, TO-247N
Image is for illustrative purposes only. Please refer to product description.
Available to Order
Manufacturer Standard Lead Time: 32 week(s)
| Quantity | Price |
|---|---|
| 1+ | $38.060 |
| 5+ | $36.140 |
| 10+ | $34.210 |
Price for:Each
Minimum: 1
Multiple: 1
$38.06
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Product Information
ManufacturerROHM
Manufacturer Part NoSCT2080KEHRC11
Newark Part No.02AH4677
Technical Datasheet
MOSFET Module ConfigurationSingle
Transistor PolarityN Channel
Channel TypeN Channel
Continuous Drain Current Id40A
Drain Source Voltage Vds1.2kV
Drain Source On State Resistance0.08ohm
On Resistance Rds(on)0.08ohm
Transistor Case StyleTO-247N
No. of Pins3Pins
Rds(on) Test Voltage18V
Gate Source Threshold Voltage Max2.8V
Power Dissipation262W
Power Dissipation Pd262W
Operating Temperature Max175°C
Product Range-
Technical Specifications
MOSFET Module Configuration
Single
Channel Type
N Channel
Drain Source Voltage Vds
1.2kV
On Resistance Rds(on)
0.08ohm
No. of Pins
3Pins
Gate Source Threshold Voltage Max
2.8V
Power Dissipation Pd
262W
Product Range
-
SVHC
Lead (23-Jan-2024)
Transistor Polarity
N Channel
Continuous Drain Current Id
40A
Drain Source On State Resistance
0.08ohm
Transistor Case Style
TO-247N
Rds(on) Test Voltage
18V
Power Dissipation
262W
Operating Temperature Max
175°C
MSL
MSL 1 - Unlimited
Technical Docs (1)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (23-Jan-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability