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SCT3030ALGC11
Silicon Carbide MOSFET, Single, N Channel, 70 A, 650 V, 0.03 ohm, TO-247
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| Quantity | Price |
|---|---|
| 1+ | $35.480 |
| 5+ | $31.630 |
| 10+ | $29.320 |
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Multiple: 1
$35.48
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Product Information
ManufacturerROHM
Manufacturer Part NoSCT3030ALGC11
Newark Part No.05AC9460
Technical Datasheet
Transistor PolarityN Channel
MOSFET Module ConfigurationSingle
Channel TypeN Channel
Continuous Drain Current Id70A
On Resistance Rds(on)0.03ohm
Drain Source Voltage Vds650V
Drain Source On State Resistance0.03ohm
Transistor Case StyleTO-247N
No. of Pins3Pins
Power Dissipation Pd262W
Rds(on) Test Voltage18V
Gate Source Threshold Voltage Max5.6V
Power Dissipation262W
Operating Temperature Max175°C
Product Range-
MSLMSL 1 - Unlimited
SVHCLead (23-Jan-2024)
Technical Specifications
Transistor Polarity
N Channel
Channel Type
N Channel
On Resistance Rds(on)
0.03ohm
Drain Source On State Resistance
0.03ohm
No. of Pins
3Pins
Rds(on) Test Voltage
18V
Power Dissipation
262W
Product Range
-
SVHC
Lead (23-Jan-2024)
MOSFET Module Configuration
Single
Continuous Drain Current Id
70A
Drain Source Voltage Vds
650V
Transistor Case Style
TO-247N
Power Dissipation Pd
262W
Gate Source Threshold Voltage Max
5.6V
Operating Temperature Max
175°C
MSL
MSL 1 - Unlimited
Technical Docs (2)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (23-Jan-2024)
Download Product Compliance Certificate
Product Compliance Certificate