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SCT3030AW7TL
Silicon Carbide MOSFET, Single, N Channel, 70 A, 650 V, 30 mohm, TO-263 (D2PAK)
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Available to Order
Manufacturer Standard Lead Time: 32 week(s)
| Quantity | Price |
|---|---|
| 1+ | $41.550 |
Price for:Each
Minimum: 1
Multiple: 1
$41.55
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Product Information
ManufacturerROHM
Manufacturer Part NoSCT3030AW7TL
Newark Part No.93AH0357
Technical Datasheet
MOSFET Module ConfigurationSingle
Channel TypeN Channel
Transistor PolarityN Channel
Continuous Drain Current Id70A
Drain Source Voltage Vds650V
Drain Source On State Resistance30mohm
On Resistance Rds(on)0.03ohm
Transistor Case StyleTO-263 (D2PAK)
No. of Pins7Pins
Power Dissipation Pd267W
Rds(on) Test Voltage18V
Gate Source Threshold Voltage Max5.6V
Power Dissipation267W
Operating Temperature Max175°C
Product Range-
Technical Specifications
MOSFET Module Configuration
Single
Transistor Polarity
N Channel
Drain Source Voltage Vds
650V
On Resistance Rds(on)
0.03ohm
No. of Pins
7Pins
Rds(on) Test Voltage
18V
Power Dissipation
267W
Product Range
-
SVHC
Lead (23-Jan-2024)
Channel Type
N Channel
Continuous Drain Current Id
70A
Drain Source On State Resistance
30mohm
Transistor Case Style
TO-263 (D2PAK)
Power Dissipation Pd
267W
Gate Source Threshold Voltage Max
5.6V
Operating Temperature Max
175°C
MSL
MSL 1 - Unlimited
Technical Docs (1)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (23-Jan-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability