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SCT3030KLGC11
Silicon Carbide MOSFET, Single, N Channel, 72 A, 1.2 kV, 30 mohm, TO-247N
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Available to Order
Manufacturer Standard Lead Time: 31 week(s)
| Quantity | Price |
|---|---|
| 1+ | $83.880 |
| 5+ | $83.880 |
| 10+ | $83.860 |
Price for:Each
Minimum: 1
Multiple: 1
$83.88
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Product Information
ManufacturerROHM
Manufacturer Part NoSCT3030KLGC11
Newark Part No.05AC9461
Technical Datasheet
Transistor PolarityN Channel
MOSFET Module ConfigurationSingle
Channel TypeN Channel
Continuous Drain Current Id72A
Drain Source Voltage Vds1.2kV
On Resistance Rds(on)0.03ohm
Drain Source On State Resistance30mohm
Transistor Case StyleTO-247N
Power Dissipation Pd339W
No. of Pins3Pins
Rds(on) Test Voltage18V
Gate Source Threshold Voltage Max5.6V
Power Dissipation339W
Operating Temperature Max175°C
Product Range-
SVHCTo Be Advised
Technical Specifications
Transistor Polarity
N Channel
Channel Type
N Channel
Drain Source Voltage Vds
1.2kV
Drain Source On State Resistance
30mohm
Power Dissipation Pd
339W
Rds(on) Test Voltage
18V
Power Dissipation
339W
Product Range
-
SVHC
To Be Advised
MOSFET Module Configuration
Single
Continuous Drain Current Id
72A
On Resistance Rds(on)
0.03ohm
Transistor Case Style
TO-247N
No. of Pins
3Pins
Gate Source Threshold Voltage Max
5.6V
Operating Temperature Max
175°C
MSL
MSL 1 - Unlimited
Technical Docs (2)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
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Product Compliance Certificate
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