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SCT3040KW7TL
Silicon Carbide MOSFET, Single, N Channel, 56 A, 1.2 kV, 0.04 ohm, TO-263 (D2PAK)
Image is for illustrative purposes only. Please refer to product description.
Available to Order
Manufacturer Standard Lead Time: 32 week(s)
| Quantity | Price |
|---|---|
| 1+ | $43.900 |
Price for:Each
Minimum: 1
Multiple: 1
$43.90
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Product Information
ManufacturerROHM
Manufacturer Part NoSCT3040KW7TL
Newark Part No.93AH0358
Technical Datasheet
MOSFET Module ConfigurationSingle
Channel TypeN Channel
Transistor PolarityN Channel
Continuous Drain Current Id56A
Drain Source Voltage Vds1.2kV
On Resistance Rds(on)0.04ohm
Drain Source On State Resistance0.04ohm
Transistor Case StyleTO-263 (D2PAK)
No. of Pins7Pins
Rds(on) Test Voltage18V
Power Dissipation Pd267W
Gate Source Threshold Voltage Max5.6V
Power Dissipation267W
Operating Temperature Max175°C
Product Range-
Technical Specifications
MOSFET Module Configuration
Single
Transistor Polarity
N Channel
Drain Source Voltage Vds
1.2kV
Drain Source On State Resistance
0.04ohm
No. of Pins
7Pins
Power Dissipation Pd
267W
Power Dissipation
267W
Product Range
-
SVHC
Lead (23-Jan-2024)
Channel Type
N Channel
Continuous Drain Current Id
56A
On Resistance Rds(on)
0.04ohm
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
18V
Gate Source Threshold Voltage Max
5.6V
Operating Temperature Max
175°C
MSL
MSL 1 - Unlimited
Technical Docs (1)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (23-Jan-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability