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SCT3080ALGC11.
Silicon Carbide MOSFET, Single, 30 A, 650 V, 0.08 ohm, TO-247
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| Quantity | Price |
|---|---|
| 1+ | $13.530 |
| 10+ | $12.920 |
| 25+ | $12.510 |
| 60+ | $11.870 |
Price for:Each
Minimum: 1
Multiple: 1
$13.53
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Product Information
ManufacturerROHM
Manufacturer Part NoSCT3080ALGC11.
Newark Part No.30AC0015
Technical Datasheet
Transistor PolarityN Channel
MOSFET Module ConfigurationSingle
Continuous Drain Current Id30A
Drain Source Voltage Vds650V
On Resistance Rds(on)0.08ohm
Drain Source On State Resistance0.08ohm
Transistor Case StyleTO-247
Power Dissipation Pd134W
No. of Pins3Pins
Rds(on) Test Voltage18V
Gate Source Threshold Voltage Max5.6V
Power Dissipation134W
Operating Temperature Max175°C
Product Range-
MSL-
SVHCLead
Technical Specifications
Transistor Polarity
N Channel
Continuous Drain Current Id
30A
On Resistance Rds(on)
0.08ohm
Transistor Case Style
TO-247
No. of Pins
3Pins
Gate Source Threshold Voltage Max
5.6V
Operating Temperature Max
175°C
MSL
-
MOSFET Module Configuration
Single
Drain Source Voltage Vds
650V
Drain Source On State Resistance
0.08ohm
Power Dissipation Pd
134W
Rds(on) Test Voltage
18V
Power Dissipation
134W
Product Range
-
SVHC
Lead
Technical Docs (1)
Associated Products
1 Product Found
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
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Product Compliance Certificate