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SEMIX352GB128DS
IGBT Module, Dual, 377 A, 2.35 V, 150 °C, SEMiX 2
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Available to Order
Manufacturer Standard Lead Time: 27 week(s)
Product Information
ManufacturerSEMIKRON
Manufacturer Part NoSEMIX352GB128DS
Newark Part No.16M0113
Technical Datasheet
IGBT ConfigurationDual
Transistor PolarityN Channel
DC Collector Current377A
Continuous Collector Current377A
Collector Emitter Saturation Voltage Vce(on)2.35V
Collector Emitter Saturation Voltage2.35V
Power Dissipation Pd-
Power Dissipation-
Collector Emitter Voltage V(br)ceo1.15V
Junction Temperature, Tj Max150°C
Operating Temperature Max150°C
Transistor Case StyleSEMiX 2
No. of Pins16Pins
IGBT TerminationStud
IGBT TechnologyTrench
Collector Emitter Voltage Max1.15V
Transistor MountingPanel
Product Range-
SVHCNo SVHC (15-Jun-2015)
Technical Specifications
IGBT Configuration
Dual
DC Collector Current
377A
Collector Emitter Saturation Voltage Vce(on)
2.35V
Power Dissipation Pd
-
Collector Emitter Voltage V(br)ceo
1.15V
Operating Temperature Max
150°C
No. of Pins
16Pins
IGBT Technology
Trench
Transistor Mounting
Panel
SVHC
No SVHC (15-Jun-2015)
Transistor Polarity
N Channel
Continuous Collector Current
377A
Collector Emitter Saturation Voltage
2.35V
Power Dissipation
-
Junction Temperature, Tj Max
150°C
Transistor Case Style
SEMiX 2
IGBT Termination
Stud
Collector Emitter Voltage Max
1.15V
Product Range
-
Technical Docs (2)
Associated Products
2 Products Found
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (15-Jun-2015)
Download Product Compliance Certificate
Product Compliance Certificate