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SKIM429GD17E4HD
IGBT Module, 595 A, 1.7 kV, 175 °C
Image is for illustrative purposes only. Please refer to product description.
Available to Order
Manufacturer Standard Lead Time: 25 week(s)
Product Information
ManufacturerSEMIKRON
Manufacturer Part NoSKIM429GD17E4HD
Newark Part No.77R2504
Technical Datasheet
Transistor PolarityN Channel
IGBT Configuration-
DC Collector Current595A
Continuous Collector Current595A
Collector Emitter Saturation Voltage1.7kV
Collector Emitter Saturation Voltage Vce(on)1.7kV
Power Dissipation Pd-
Power Dissipation-
Operating Temperature Max175°C
Junction Temperature, Tj Max175°C
Collector Emitter Voltage V(br)ceo1.1V
Transistor Case Style-
No. of Pins32Pins
IGBT TerminationPress Fit
IGBT Technology-
Collector Emitter Voltage Max1.1V
Transistor MountingPanel
Product Range-
SVHCNo SVHC (15-Jun-2015)
Technical Specifications
Transistor Polarity
N Channel
DC Collector Current
595A
Collector Emitter Saturation Voltage
1.7kV
Power Dissipation Pd
-
Operating Temperature Max
175°C
Collector Emitter Voltage V(br)ceo
1.1V
No. of Pins
32Pins
IGBT Technology
-
Transistor Mounting
Panel
SVHC
No SVHC (15-Jun-2015)
IGBT Configuration
-
Continuous Collector Current
595A
Collector Emitter Saturation Voltage Vce(on)
1.7kV
Power Dissipation
-
Junction Temperature, Tj Max
175°C
Transistor Case Style
-
IGBT Termination
Press Fit
Collector Emitter Voltage Max
1.1V
Product Range
-
Technical Docs (1)
Associated Products
2 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (15-Jun-2015)
Download Product Compliance Certificate
Product Compliance Certificate