Print Page
SKM 195 GB 126 DN
IGBT Module, 220 A, 2.15 V, 150 °C, SEMITRANS 2
Image is for illustrative purposes only. Please refer to product description.
Available to Order
Manufacturer Standard Lead Time: 26 week(s)
Product Information
ManufacturerSEMIKRON
Manufacturer Part NoSKM 195 GB 126 DN
Newark Part No.88K1194
Technical Datasheet
IGBT Configuration-
Transistor PolarityN Channel
Continuous Collector Current220A
DC Collector Current220A
Collector Emitter Saturation Voltage2.15V
Collector Emitter Saturation Voltage Vce(on)1.2kV
Power Dissipation-
Power Dissipation Pd-
Junction Temperature, Tj Max150°C
Collector Emitter Voltage V(br)ceo1.2kV
Operating Temperature Max150°C
Transistor Case StyleSEMITRANS 2
IGBT TerminationStud
No. of Pins7Pins
Collector Emitter Voltage Max1.2kV
IGBT TechnologyNPT IGBT [Ultrafast]
Transistor MountingPanel
Product Range-
SVHCNo SVHC (15-Jun-2015)
Technical Specifications
IGBT Configuration
-
Continuous Collector Current
220A
Collector Emitter Saturation Voltage
2.15V
Power Dissipation
-
Junction Temperature, Tj Max
150°C
Operating Temperature Max
150°C
IGBT Termination
Stud
Collector Emitter Voltage Max
1.2kV
Transistor Mounting
Panel
SVHC
No SVHC (15-Jun-2015)
Transistor Polarity
N Channel
DC Collector Current
220A
Collector Emitter Saturation Voltage Vce(on)
1.2kV
Power Dissipation Pd
-
Collector Emitter Voltage V(br)ceo
1.2kV
Transistor Case Style
SEMITRANS 2
No. of Pins
7Pins
IGBT Technology
NPT IGBT [Ultrafast]
Product Range
-
Technical Docs (1)
Associated Products
1 Product Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (15-Jun-2015)
Download Product Compliance Certificate
Product Compliance Certificate