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SKM145GAL128DN
IGBT Module, 190 A, 1.2 kV, 150 °C, Module
Image is for illustrative purposes only. Please refer to product description.
Available to Order
Manufacturer Standard Lead Time: 27 week(s)
Product Information
ManufacturerSEMIKRON
Manufacturer Part NoSKM145GAL128DN
Newark Part No.02M8584
Technical Datasheet
Transistor PolarityN Channel
IGBT Configuration-
DC Collector Current190A
Continuous Collector Current190A
Collector Emitter Saturation Voltage Vce(on)1.2kV
Collector Emitter Saturation Voltage1.2kV
Power Dissipation-
Power Dissipation Pd-
Collector Emitter Voltage V(br)ceo1.2kV
Operating Temperature Max150°C
Junction Temperature, Tj Max150°C
Transistor Case StyleModule
No. of Pins5Pins
IGBT TerminationStud
Collector Emitter Voltage Max1.2kV
IGBT TechnologyNPT IGBT [Ultrafast]
Transistor MountingPanel
Product Range-
Technical Specifications
Transistor Polarity
N Channel
DC Collector Current
190A
Collector Emitter Saturation Voltage Vce(on)
1.2kV
Power Dissipation
-
Collector Emitter Voltage V(br)ceo
1.2kV
Junction Temperature, Tj Max
150°C
No. of Pins
5Pins
Collector Emitter Voltage Max
1.2kV
Transistor Mounting
Panel
SVHC
No SVHC (15-Jun-2015)
IGBT Configuration
-
Continuous Collector Current
190A
Collector Emitter Saturation Voltage
1.2kV
Power Dissipation Pd
-
Operating Temperature Max
150°C
Transistor Case Style
Module
IGBT Termination
Stud
IGBT Technology
NPT IGBT [Ultrafast]
Product Range
-
Technical Docs (1)
Associated Products
1 Product Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (15-Jun-2015)
Download Product Compliance Certificate
Product Compliance Certificate