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GD1400HFY120P2S
IGBT Module, Half Bridge, 2.315 kA, 1.7 V, 7.94 kW, 150 °C, Module
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Available to Order
Manufacturer Standard Lead Time: 29 week(s)
Quantity | Price |
---|---|
1+ | $957.950 |
6+ | $948.540 |
10+ | $939.390 |
26+ | $902.480 |
Price for:Each
Minimum: 1
Multiple: 1
$957.95
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Product Information
ManufacturerSTARPOWER
Manufacturer Part NoGD1400HFY120P2S
Newark Part No.84AH5708
Technical Datasheet
IGBT ConfigurationHalf Bridge
Continuous Collector Current2.315kA
DC Collector Current2.315kA
Collector Emitter Saturation Voltage Vce(on)1.7V
Collector Emitter Saturation Voltage1.7V
Power Dissipation Pd7.94kW
Power Dissipation7.94kW
Operating Temperature Max150°C
Junction Temperature, Tj Max150°C
Collector Emitter Voltage V(br)ceo1.2kV
Transistor Case StyleModule
IGBT TerminationStud
Collector Emitter Voltage Max1.2kV
IGBT TechnologyTrench Field Stop
Transistor MountingPanel
Product Range-
SVHCTo Be Advised
Technical Specifications
IGBT Configuration
Half Bridge
DC Collector Current
2.315kA
Collector Emitter Saturation Voltage
1.7V
Power Dissipation
7.94kW
Junction Temperature, Tj Max
150°C
Transistor Case Style
Module
Collector Emitter Voltage Max
1.2kV
Transistor Mounting
Panel
SVHC
To Be Advised
Continuous Collector Current
2.315kA
Collector Emitter Saturation Voltage Vce(on)
1.7V
Power Dissipation Pd
7.94kW
Operating Temperature Max
150°C
Collector Emitter Voltage V(br)ceo
1.2kV
IGBT Termination
Stud
IGBT Technology
Trench Field Stop
Product Range
-
Technical Docs (1)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate