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ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTB10NK60ZT4
Newark Part No.33R1094
Technical Datasheet
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10+ | $3.980 |
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500+ | $2.670 |
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Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTB10NK60ZT4
Newark Part No.33R1094
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds600V
Continuous Drain Current Id4.5A
Drain Source On State Resistance0.65ohm
On Resistance Rds(on)0.65ohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Power Dissipation Pd115W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3.75V
Power Dissipation115W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (21-Jan-2025)
Product Overview
The STB10NK60ZT4 is a SuperMESH™ N-channel Power MOSFET offers Zener-protection and minimized gate charge. This Power MOSFET developed using STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's well-established strip based PowerMESH™ layout. In addition to a significant reduction in ON-resistance, this device is designed to ensure a high level of dV/dt capability for the most demanding applications.
- Extremely high dV/dt capability
- 100% Avalanche tested
Applications
Industrial, Power Management
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
4.5A
On Resistance Rds(on)
0.65ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Power Dissipation
115W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Drain Source Voltage Vds
600V
Drain Source On State Resistance
0.65ohm
Transistor Case Style
TO-263 (D2PAK)
Power Dissipation Pd
115W
Gate Source Threshold Voltage Max
3.75V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability