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STB38N65M5
MOSFET, N-CH, 650V, 30A, TO-263
Image is for illustrative purposes only. Please refer to product description.
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTB38N65M5
Newark Part No.34AC1981
Product RangeMDmesh V
Your Part Number
1,387 In Stock
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Delivery in 2-4 Business Days(UK stock)
Order before 9pm EST standard shipping
| Quantity | Price |
|---|---|
| 1+ | $11.540 |
| 10+ | $8.400 |
| 25+ | $7.830 |
| 50+ | $7.270 |
| 100+ | $6.720 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$11.54
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTB38N65M5
Newark Part No.34AC1981
Product RangeMDmesh V
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds650V
Continuous Drain Current Id30A
Drain Source On State Resistance0.073ohm
On Resistance Rds(on)0.073ohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd190W
Gate Source Threshold Voltage Max4V
Power Dissipation190W
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeMDmesh V
Qualification-
SVHCNo SVHC (25-Jun-2025)
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
650V
Drain Source On State Resistance
0.073ohm
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
MDmesh V
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
30A
On Resistance Rds(on)
0.073ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
190W
Power Dissipation
190W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability