Print Page
STB6NK60ZT4
Power MOSFET, N Channel, 600 V, 3 A, 1 ohm, TO-263 (D2PAK), Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTB6NK60ZT4
Newark Part No.33R1127
Technical Datasheet
4,619 In Stock
Need more?
Delivery in 2-4 Business Days(UK stock)
Order before 9pm EST standard shipping
| Quantity | Price |
|---|---|
| 1+ | $3.660 |
| 10+ | $2.730 |
| 25+ | $2.530 |
| 50+ | $2.330 |
| 100+ | $2.130 |
| 250+ | $2.120 |
| 500+ | $1.890 |
| 1000+ | $1.780 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$3.66
Enter Your Part No/Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTB6NK60ZT4
Newark Part No.33R1127
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds600V
Continuous Drain Current Id3A
Drain Source On State Resistance1ohm
On Resistance Rds(on)1ohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Power Dissipation Pd110W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3.75V
Power Dissipation110W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (21-Jan-2025)
Product Overview
The STB6NK60ZT4 is a SuperMESH™ N-channel Power MOSFET offers Zener-protection and minimized gate charge. The SuperMESH™ is obtained through an extreme optimization of ST's well established strip-based PowerMESH™ layout. In addition to pushing ON-resistance significantly down, special care is taken to ensure a very good dV/dt capability for the most demanding applications.
- 100% Avalanche tested
- Extremely high dV/dt capability
Applications
Industrial, Power Management
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
3A
On Resistance Rds(on)
1ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Power Dissipation
110W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Drain Source Voltage Vds
600V
Drain Source On State Resistance
1ohm
Transistor Case Style
TO-263 (D2PAK)
Power Dissipation Pd
110W
Gate Source Threshold Voltage Max
3.75V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (3)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability