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STD2NK90Z-1
MOSFET, N CHANNEL, 900V, 2.1A, IPAK
Image is for illustrative purposes only. Please refer to product description.
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTD2NK90Z-1
Newark Part No.33R1149
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 14 week(s)
| Quantity | Price |
|---|---|
| 1+ | $2.600 |
| 10+ | $2.370 |
| 150+ | $1.950 |
| 525+ | $1.640 |
| 1050+ | $1.520 |
Price for:Each
Minimum: 1
Multiple: 1
$2.60
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTD2NK90Z-1
Newark Part No.33R1149
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds900V
Continuous Drain Current Id1.05A
Drain Source On State Resistance5ohm
On Resistance Rds(on)5ohm
Transistor Case StyleTO-251AA
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Power Dissipation Pd70W
Gate Source Threshold Voltage Max3.75V
Power Dissipation70W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (25-Jun-2025)
Product Overview
The STD2NK90Z-1 is a SuperMESH™ N-channel Power MOSFET offers Zener-protection and minimized gate charge. The SuperMESH™ is obtained through an extreme optimization of ST's well established strip based PowerMESH™ layout. In addition to pushing ON-resistance significantly down, special care is taken to ensure a very good dV/dt capability for the most demanding applications. This MOSFET complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.
- Extremely high dV/dt capability
- 100% Avalanche tested
- Improved ESD capability
- Very low intrinsic capacitance
- Very good manufacturing repeatability
Applications
Industrial, Power Management
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
1.05A
On Resistance Rds(on)
5ohm
Transistor Mounting
Through Hole
Power Dissipation Pd
70W
Power Dissipation
70W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
900V
Drain Source On State Resistance
5ohm
Transistor Case Style
TO-251AA
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
3.75V
No. of Pins
3Pins
Product Range
-
MSL
-
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate