Print Page
STF19NF20
Power MOSFET, N Channel, 200 V, 7.5 A, 150 mohm, TO-220FP, Through Hole
Image is for illustrative purposes only. Please refer to product description.
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTF19NF20
Newark Part No.33R1200
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 23 week(s)
| Quantity | Price |
|---|---|
| 1+ | $2.800 |
| 10+ | $2.510 |
| 100+ | $1.590 |
| 500+ | $1.440 |
| 1000+ | $1.390 |
| 2500+ | $1.300 |
| 10000+ | $1.270 |
Price for:Each
Minimum: 1
Multiple: 1
$2.80
Enter Your Part No/Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTF19NF20
Newark Part No.33R1200
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds200V
Continuous Drain Current Id7.5A
Drain Source On State Resistance150mohm
On Resistance Rds(on)0.15ohm
Transistor Case StyleTO-220FP
Transistor MountingThrough Hole
Power Dissipation Pd25W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation25W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
7.5A
On Resistance Rds(on)
0.15ohm
Transistor Mounting
Through Hole
Rds(on) Test Voltage
10V
Power Dissipation
25W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Drain Source Voltage Vds
200V
Drain Source On State Resistance
150mohm
Transistor Case Style
TO-220FP
Power Dissipation Pd
25W
Gate Source Threshold Voltage Max
3V
No. of Pins
3Pins
Product Range
-
MSL
-
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability