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ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTF9NK90Z
Newark Part No.33R1215
Technical Datasheet
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1+ | $4.060 |
10+ | $3.660 |
100+ | $3.620 |
500+ | $3.450 |
1000+ | $3.050 |
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Multiple: 1
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Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTF9NK90Z
Newark Part No.33R1215
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds900V
Continuous Drain Current Id3.6A
On Resistance Rds(on)1.1ohm
Drain Source On State Resistance1.1ohm
Transistor Case StyleTO-220FP
Transistor MountingThrough Hole
Power Dissipation Pd40W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3.75V
Power Dissipation40W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (21-Jan-2025)
Product Overview
The STF9NK90Z is a SuperMESH™ N-channel Power MOSFET offers Zener-protection and minimized gate charge. The SuperMESH™ is obtained through an optimization of STMicroelectronics' well-established strip-based PowerMESH™ layout. In addition to pushing ON-resistance significantly lower, it also ensures very good dV/dt capability for the most demanding applications. This MOSFET complement STs' full range of high voltage power MOSFETs.
- Extremely high dV/dt capability
- 100% Avalanche tested
Applications
Industrial, Power Management
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
3.6A
Drain Source On State Resistance
1.1ohm
Transistor Mounting
Through Hole
Rds(on) Test Voltage
10V
Power Dissipation
40W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Drain Source Voltage Vds
900V
On Resistance Rds(on)
1.1ohm
Transistor Case Style
TO-220FP
Power Dissipation Pd
40W
Gate Source Threshold Voltage Max
3.75V
No. of Pins
3Pins
Product Range
-
MSL
-
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability