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GT30J65MRB,S1E(S
IGBT, 60 A, 1.4 V, 200 W, 650 V, TO-3P, 3 Pins
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210 In Stock
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50 Delivery in 1-3 Business Days(US stock)
160 Delivery in 2-4 Business Days(UK stock)
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| Quantity | Price |
|---|---|
| 1+ | $2.090 |
| 10+ | $2.090 |
| 25+ | $2.090 |
| 50+ | $2.090 |
| 100+ | $2.090 |
| 250+ | $2.090 |
| 500+ | $2.090 |
Price for:Each
Minimum: 1
Multiple: 1
$2.09
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Product Information
ManufacturerTOSHIBA
Manufacturer Part NoGT30J65MRB,S1E(S
Newark Part No.68AK5257
Technical Datasheet
Continuous Collector Current60A
Collector Emitter Saturation Voltage1.4V
Power Dissipation200W
Collector Emitter Voltage Max650V
Transistor Case StyleTO-3P
No. of Pins3Pins
Operating Temperature Max175°C
Transistor MountingThrough Hole
Product Range-
SVHCTo Be Advised
Technical Specifications
Continuous Collector Current
60A
Power Dissipation
200W
Transistor Case Style
TO-3P
Operating Temperature Max
175°C
Product Range
-
Collector Emitter Saturation Voltage
1.4V
Collector Emitter Voltage Max
650V
No. of Pins
3Pins
Transistor Mounting
Through Hole
SVHC
To Be Advised
Technical Docs (1)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate