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GT50JR22(STA1,E,S)
IGBT, 50 A, 1.55 V, 230 W, 600 V, TO-3PN, 3 Pins
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206 In Stock
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| Quantity | Price |
|---|---|
| 1+ | $7.360 |
| 10+ | $7.230 |
| 25+ | $4.480 |
| 50+ | $4.380 |
| 100+ | $3.670 |
| 250+ | $3.650 |
| 500+ | $3.090 |
Price for:Each
Minimum: 1
Multiple: 1
$7.36
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Product Information
ManufacturerTOSHIBA
Manufacturer Part NoGT50JR22(STA1,E,S)
Newark Part No.09AK4080
Technical Datasheet
DC Collector Current50A
Continuous Collector Current50A
Collector Emitter Saturation Voltage1.55V
Collector Emitter Saturation Voltage Vce(on)1.55V
Power Dissipation Pd230W
Power Dissipation230W
Collector Emitter Voltage Max600V
Collector Emitter Voltage V(br)ceo600V
Transistor Case StyleTO-3PN
No. of Pins3Pins
Operating Temperature Max175°C
Transistor MountingThrough Hole
Product Range-
SVHCTo Be Advised
Technical Specifications
DC Collector Current
50A
Collector Emitter Saturation Voltage
1.55V
Power Dissipation Pd
230W
Collector Emitter Voltage Max
600V
Transistor Case Style
TO-3PN
Operating Temperature Max
175°C
Product Range
-
Continuous Collector Current
50A
Collector Emitter Saturation Voltage Vce(on)
1.55V
Power Dissipation
230W
Collector Emitter Voltage V(br)ceo
600V
No. of Pins
3Pins
Transistor Mounting
Through Hole
SVHC
To Be Advised
Technical Docs (1)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability