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TBD62064AFAG(Z,EHZ
DMOS Transistor Array, 4 Output, 1.5 A/50V Out, -40 to 85°C, SSOP-16
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| Quantity | Price |
|---|---|
| 1+ | $4.050 |
| 10+ | $3.560 |
| 100+ | $3.010 |
| 500+ | $2.840 |
| 1000+ | $2.630 |
| 4000+ | $2.280 |
| 6000+ | $2.230 |
Price for:Each
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Multiple: 1
$4.05
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Product Information
ManufacturerTOSHIBA
Manufacturer Part NoTBD62064AFAG(Z,EHZ
Newark Part No.74AK2909
Technical Datasheet
Supply Voltage Min-
Supply Voltage Max-
No. of Outputs4Outputs
Output Voltage50V
Output Current1.5A
Driver Case StylePSSOP
Product Range-
SVHCTo Be Advised
Product Overview
TBD62064AFAG(Z,EHZ is a BiCD silicon monolithic integrated circuit. It has a clamp diode for switching inductive loads built-in in each output.
- 4channel high current sink type DMOS transistor array
- High voltage is 50V (max, Ta = 25°C), high current is 1.5A/ch (max, Ta = 25°C)
- Input voltage range from 2.5 to 25V (output on, IOUT = 100mA or upper, VOUT = 2V, Ta = −40 to 85°C)
- COMMON pin voltage is 50V (Ta = -40 to 85°C, max)
- Clamp diode forward current is 1.25A (max, Ta = -40 to 85°C)
- Output leakage current is 1.0μA (max, VIN = 0V, VOUT = 50V, Ta = 25°C)
- Turn on delay is 1.0μs (typ, VOUT = 50V, RL = 42Kohm, CL = 15pF)
- Turn off delay is 1.7μs (typ, VOUT = 50V, RL = 42Kohm, CL = 15pF)
- P-SSOP24-0613-1.00-001 package, operating temperature range from -40 to 85°C
Notes
Please be careful about thermal conditions during use.
Technical Specifications
Supply Voltage Min
-
No. of Outputs
4Outputs
Output Current
1.5A
Product Range
-
Supply Voltage Max
-
Output Voltage
50V
Driver Case Style
PSSOP
SVHC
To Be Advised
Technical Docs (1)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability