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TW083N65C,S1F(S
Silicon Carbide MOSFET, Single, N Channel, 30 A, 650 V, 0.113 ohm, TO-247
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| Quantity | Price |
|---|---|
| 1+ | $9.200 |
| 10+ | $9.200 |
| 25+ | $9.200 |
| 60+ | $9.200 |
| 120+ | $9.200 |
| 270+ | $9.200 |
| 510+ | $9.200 |
Price for:Each
Minimum: 1
Multiple: 1
$9.20
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Product Information
ManufacturerTOSHIBA
Manufacturer Part NoTW083N65C,S1F(S
Newark Part No.50AK7224
Technical Datasheet
MOSFET Module ConfigurationSingle
Channel TypeN Channel
Continuous Drain Current Id30A
Drain Source Voltage Vds650V
Drain Source On State Resistance0.113ohm
Transistor Case StyleTO-247
No. of Pins3Pins
Rds(on) Test Voltage18V
Gate Source Threshold Voltage Max5V
Power Dissipation111W
Operating Temperature Max175°C
Product Range-
SVHCTo Be Advised
Technical Specifications
MOSFET Module Configuration
Single
Continuous Drain Current Id
30A
Drain Source On State Resistance
0.113ohm
No. of Pins
3Pins
Gate Source Threshold Voltage Max
5V
Operating Temperature Max
175°C
SVHC
To Be Advised
Channel Type
N Channel
Drain Source Voltage Vds
650V
Transistor Case Style
TO-247
Rds(on) Test Voltage
18V
Power Dissipation
111W
Product Range
-
Technical Docs (1)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate